Somerset, NJ (March, 2006)
This 10G APD has extremely low dark current and has a spectral response of 1000 to 1625nm to detect very small amounts of light over a wide wavelength range. NSG’s APD employs a separate absorption and multiplication (SAM) structure using InGaAs and InP, respectively. The NSG 10G APD is sold as a chip-on-carrier assembly and uses a back illuminated structure. The APD active diameter of the chip is just 22µm and is assembled on a ceramic sub-carrier.
Dr. Simin Cai, President and CEO for NSG America Inc. explains “NSG is offering this 10Gb/s APD to meet the demands of the metro and long haul markets. We use a planar structure for high reliability. Our experience in material based manufacturing gives NSG a technological advantage in producing APDs which are reliable and low in cost.”